工厂安全管理制度-植树节标语

09OEG32026 18
Test Report
To: KAHO ELECTRONICS CO.,LTD
・This test report shows the detailes of ESD test condition.
Order number：S320-09-0005
【Summary】
Model name：Crystal Oscillator IC KH9709
・It reports on the ability value evaluation of various ESD test.
1．Standards compliant
・HBM
・MM
・FI- CDM
：AEC-Q100-002 REV-D
：AEC-Q100-003 REV-E
：AEC-Q100-011 REV-B
2．Evaluation result
(1)The judgment result by the IV measurement of each terminal is shown.
・The abnormal value was not observed.
PinName
Com mon
terminal
VDD
VSS
IO- IO
VDD
VSS
IO-IO
VDD
VSS
IO- IO
VDD
VSS
IO-IO
Polarity
+-
+-< br>+-
+-
+-
+-
+-
+-
+-
+-
+-
+-
HBM
1000V2000V
0303
0303
0303
0303
0303
0303
0303
0303
03 03
0303
0303
0303
Fail sizeSample size
MM
200V400V
0303
0303
0303
0303
0303
0303
0303
0303
0303
03030303
0303
XT
INHN
Q
XTN
500V03
03
03
03
03
03
03
03
03
03
03
03
4000V
03
03
03
03
03
03
03
03
03
03
03
0 3
50V
03
03
03
03
03
03
03
03
03
03
03
03
100V
03
03
03
03
03
03
03
03
03
0303
03
PinName
Polarity
XT
INHN
Q
XTN
+
-
+
-
+
-
+
-< br>125V
03
03
03
03
03
03
03< br>03
250V
03
03
03
03
03
03< br>03
03
FI-CDM
500V
03
03
03
03
03
03
03
03
750V
03
03
03
03
03
03
03
03
1000V
0303
03
03
03
03
03
03
OKI Engineering Co., Ltd
CONFIDENTIAL
09OEG32026 28

(2)The judgment result of the current draw(Idd) measurement is shown.
・An increase in leakage was seen in HBM±1000V、±2000V、±4000V、FICDM-1000V.
・An increase in leakage was not seen in MM.
Fail sizeSample size
MM
4000V
03
33
0350V
03
03
03
100V
03
03
03< br>200V
03
03
03
400V
03
03
0 3
PinName
Common
terminal
VDD
VSSIO-IO
polarity
+-
+-
+-
HBM
50 0V
03
03
03
1000V
33
03
03
2000V
03
33
03
VDD
PinNamepolarity
VDD
+
-
FI-CDM
125V
03
03
250V
03
03
500V
03
03
750V
0 3
03
1000V
03
13
(3)The HBM addition measurement result is shown.
・To confirm whether it was progress of the leakage increase phenomenon of (2), Dependence by pulse number,
temperature characteristic , high temparature soak test was executed.
As a result, the great increase in leakage was not seen.
〈Pulse number test〉
Pulse
number1
3
5
7
10
#97
7.30E-08
2.0 5E-07
1.89E-07
1.74E-07
1.42E-07
Idd(A )
#98
9.91E-11
5.45E-07
4.01E-07
3. 75E-07
3.44E-07
#99
1.12E-10
3.79E-07< br>6.96E-07
6.78E-07
7.02E-07
〈Temperatur e characteristic test〉
temp
85℃
Idd(A)
#97#98#99
7.71E-082.05E-074.63E-07
〈High temperature soak test〉
temp
150℃
Idd(A)#97#98#99
2.88E-083.84E-081.28E-07
3．Concl usions
About the current draw measurement, increase of the leakage was confirmed after an electric discharge in HBM, FI-CDM.
Whether this is a defective mode dependence by pulse number (leakage decrease by detrap phenomenon) ,
leakage after high temperature soak, and leakage in high temperature (85℃) state are confirmed from the idea
of the career trap phenomenon by having discharged electricity to the power supply terminal(VDD) is understood.
As a result, the increase of Leake was not seen and it is thought a leakage increase that accompanies
a substrate leakage increase by the career trap etc. It is no problem even if it excludes it from a defective
judgment in the place where Leake is in the standard.
The results of various ESD performance values are as follows.
Test model
HBM
MM
FI-CDM
Performan ce
values
>4000V
>400V
>1000V
OKI Engineering Co., Ltd
CONFIDENTIAL
09OEG32026 38

1Title
・ESD Test
　
・Model name：
・Package：
Crystal Oscillator IC KH9709
DIP8pin (HBMMM)、SMD7*5 LVPECL PKG (FICDM)
2Device
3
【IV measurement and Current draw measurement】
〈Test Method〉
Test Method
・The IV measurement of XT, INHN, Q, and XTN terminal before and after the electrical discharge
and
is examined on the following conditions.
Test condition
・Current draw measurement is examined on the following conditions.
〈Test condition〉
・Mesurement temperature　：　Room temperature
VFIM
BIAS
PinName
condition
rangesteplimit
XT
IN HN
Q
XTN
-1.0～7.0V
-1.0～1.0V
0.1V±1 .0mA
5.5V
5.5V
5.5V
-
Mesurement condition
XT →　Connect to VSS terminal
INHN →　Connect to VSS terminal
Short-circuit in VDD and VSS terminal
PinName
VDD
Idd
limit
10mA
Mesurement condition
XT→Connect to VSS terminal
【Human Body Model（Cd：100pF、Rd：1.5kΩ）】
〈Test Method〉
・The IV of XT, INHN, Q, and XTN terminal and current draw are mesureed before an electrical discharge.
・About each method,each test voltage is discharged to the testing terminal.
・The IV of XT, INHN, Q, and XTN terminal and current draw are mesureed after an electrical discharge.
〈Test condition〉
・Standards comliant
・Test voltage
・Polarity
・Test temperature
・Test pins
・Puls number
・Common terminal
・Sample size
Meth ods
1
2
3
：
：
：
：
：　
：< br>：
：
AEC-Q100-002 REV-D is assumed to be basic.
500V、1000V、2000V、4000V　
Positive and Negative
Room temperature
All pins (Total：6pins)*Refer to pinTable described in
One times page 6 for details.
VDD、VSS、IO- IO
It shows as follows.
Test voltage
50 0V
3
3
3
1000V
3
3
3
2000V
3
3
3
4000V
3
3
3
Common< br>terminal
VDD
VSS
IO- IO
Polarity
+-
+-
+-
【Machine Model（Cd：200pF、Rd：0Ω）】
〈Test Method〉
・The IV of XT, INHN, Q, and XTN terminal and current draw are mesureed before an electrical discharge.
・About each method,each voltage is discharged to the testing terminal.
・The IV of XT, INHN, Q, and XTN terminal and current draw are mesureed after an electrical discharge.
〈Test condition〉
・Standards comliant
・Test voltage
・Polarity
・Test temperature
・Test pins
・Puls number
・Interval
・Common terminal
・Sample size
Methods
1
2
3
：
：
：
：
：　
：
：
：
：
AEC-Q100-003 REV-E　is assumed to be basic.
50V、100V、200V、400V　
Positive and Negative
Room temperature
All pins (Total：6pins)*Refer to pinTable described in
3times page 6 for details.
1.0second
VDD、VSS、IO-IO
It shows as follows.
50V
3
3
3
Test voltage
100V200V
33
33
33
400V
3
3
3
Common
terminal
VDD
VSS
IO- IO
Polarity
+-
+-
+-
OKI Engineering Co., Ltd
CONFIDENTIAL

09OEG32026 48
【Field-Induced Charged Device Model】
〈Test Method〉
・The IV of XT, INHN, Q, and XTN terminal and current draw are mesureed before an electrical discharge.
Test Method
・About each method,each voltage is discharged to the testing terminal.
and
・The IV of XT, INHN, Q, and XTN terminal and current draw are mesureed after an electrical discharge.
Test condition
〈Test condition〉
・Standards comliant
・Test voltage
・Polarity
・Test temperature
・Test pins
・Puls number
・Interval
・Sample size< br>MethodsPolarity
1
2
+
-
：
：：
：
：　
：
：
：
AEC-Q100-011 REV-B　is assumed to be basic.
125V、250V、500V、750V、1000V　
Positive and Negative
Room temperature
All pins (Total：6pins)*Refer to pinTable described in
3times page 6 for details.
1.0second
It shows as follows.
Test vol tage
250V500V750V
333
333
125V
3
3
1000V
3
3
【HBM addition measurement】
①Pulse number test
〈Test Method〉
・Chek for changes in current draw by the pulse number.
〈Test condition〉
・Standards comliant
・Test voltage
・Polarity
・Test temperature
・Test pins
・Puls number
・Interval
・Common terminal
・Sample size
：
：
：
：
：　
：
：
：
：
AEC-Q100-002 REV-D　is assumed to be basic.
1000V
Positive and Negative
Room temperature
All pins (Total：6pins)*Refer to pinTable described in
1、3、5、7、10times page 6 for details.
0.5seconds
VDD
3pieces
②Temperature characteristic test
〈Test Method〉
・After an electrical discharge test , using the same sample , 85℃ in the measurement of current draw.
〈Test condition〉
・Measurement temperature：85℃
・Sample size：3pieces
③High temperature soak test
〈Test Method〉
・After temperature characterisitic test , using the same sample , 150℃ in the measurement of
high temperarure soak test.
〈Test condition〉
・Measurement temperature：150℃
・Soak time：24 hours
・Sample size：3pieces
OKI Engineering Co., Ltd
CONFIDENTIAL

09OEG32026 58
【IV measurement and current draw measurement result before an electrical discharge】
・IV measurement and the current measurement result before an electrical discharge about a DIP8pin sample
(100pieces) and a sample (30pieces) for CDM mention it in the initial characteristic data of the attached sheet.
(The document number refers to page 6.)
VF point
Pin Name
・Measurement average+3σ and measurement average+5σ in each
0V、5.5V
voltage point are described to the initial characteristic data of theXT、INHN、Q
-0.4V、0V、0.5V
attached paper as a judging material of the judgment standard. XTN
(The document number refers to page 6.)
【HBM test result】
①IV measurement result after an electrical discharge
・The abnormal value regarded as destruction was not watched.
・Details of measurements have been described to HBM caracteristic data　after an electrical discharge
　of the attached sheet. (The document number refers to page 6.)
Pin name
Common
terminal
VDD
VSS
IO- IO
VDD
VSS
IO-IO
VDD
VSS
IO- IO
VDD
VSS
IO-IO
Polarity
+-
+-< br>+-
+-
+-
+-
+-
+-
+-
+-
+-
+-
Fail sizeSample size
Test voltage< br>1000V2000V4000V
030303
030303
030303030303
030303
030303
030303
030303030303
030303
030303
030303
4Test re sult
XT
INHN
Q
XTN
500V
03
03
03
03
03
03
03
03
03
0303
03
②Current draw measurement result after an electrical discharge
・An increase in leakage current was seen in ±1000V、±2000V、±4000V.
・Details of measurements have been described to HBM caracteristic data　after an electrical discharge
Fail sizeSample size
　of the attached sheet. (The document number refers to page 6.)
Pin name
VDD
Common
terminal< br>VDD
VSS
IO-IO
Polarity
+-
+-
+-
500V
03
03
03
Test voltage
10 00V2000V
3303
0333
0303
4000V
03
33
03
※①Pulse number test, ②Temperture characteristic test, and ③High temperture soak test
are executed as a result, and it is confirmed whether the leakage increase phenomenon is progress.
【HBM additon result】
①Pulse number test
・The current draw value by pulse number is indicated as follows.
・After that, it is a saturated condition though an increase in leakage was seen three times.
・Because the great increase is not seen, it can be said that it will not be progress.
Pulse
number
1
3
5
7
10
Idd(A)
#97
7.30E-08
2.05E-07
1.89E-07
1.74E-07
1.42E-07
#9 8
9.91E-11
5.45E-07
4.01E-07
3.75E-07< br>3.44E-07
#99
1.12E-10
3.79E-07
6.96 E-07
6.78E-07
7.02E-07
②Temperature characteristic test
・The current draw value by 85℃ in measurement temperature is indicated as follows.
・A decrease in leakage was seen.
Temp
85℃
Idd(A)
#97#98#99
7.71E-082.05 E-074.63E-07
③High temperature soak test
・The current draw value after the high temperature soak of 150℃ is indicated as follows.
・A decrease in leakage was seen.
Temp
1 50℃
Idd(A)
#97#98#99
2.88E-083.84E-081.28 E-07
※It is thought a leakage increase that accompanies a substrate leakage increase by the
　 career trap etc. from the result of ①～③. It is no problem even if it excludes it from
a defective judgment in the place where Leake is in the standard.
OKI Engineering Co., Ltd
CONFIDENTIAL

09OEG32026 68
【MM test result】
①IV measurement result after an electrical discharge
・The abnormal value regarded as destruction was not watched.
・Details of measurements have been described to MM caracteristic data　after an electrical discharge
　of the attached sheet. (The document number refers to page 6.)
Pin name
Common
terminal
VDD
VSS
IO- IO
VDD
VSS
IO-IO
VDD
VSS
IO- IO
VDD
VSS
IO-IO
Polarity
+-
+-< br>+-
+-
+-
+-
+-
+-
+-
+-
+-
+-
Fail sizeSample size
Test voltage< br>100V200V400V
030303
030303
030303
0 30303
030303
030303
030303
030303
0 30303
030303
030303
Pulse number test
1.00E-06
030303
Test result
XT
INHN
Q
XTN
9.00E-07
8.00E-07
②Curr ent draw measurement result after an electrical discharge
7.00E-07
6.00E-07
・An increase in leakage was not seen in MM.
5.00E-07
・Details of measurements have been described to MM caracteristic data　after an electrical discharge
4.00E-07
　of the attached sheet. (The document number refers to page 6.)
3.00E-07
2.00E-07
Fail sizeSample size
Test voltage
1.00E-07
Common
0.00E+00
Pin n amePolarity
terminal
50V100V200V400V
1112
Pulse number
VDD+-03030303
50V
03
03
03
03
03
03
03
03
03
03
03
03
#97
#98
#99
VDDVSS
IO- IO
+-
+-
03
03
03
03
I
dd
(
A
)
03
03
03
03
【FI- CDM test result】
①IV measurement result after an electrical discharge
・The abnormal value regarded as destruction was not watched.
・Details of measurements have been described to FICDM caracteristic data　after an electrical discharge
　of the attached sheet. (The document number refers to page 6.)
Fail sizeSample size
Pin namePolarity
XT
INHN< br>Q
XTN
+
-
+
-
+
-
+
-
Test voltage
125V
03
03
03
03< br>03
03
03
03
250V
03
03
03< br>03
03
03
03
03
500V
03
03< br>03
03
03
03
03
03
750V
03< br>03
03
03
03
03
03
03
1000V
03
03
03
03
03
03
03
03②Current draw measurement result after an electrical discharge
・An increase in leakage was seen in -1000V.
・Details of measurements have been described to FICDM caracteristic data　after an electrical discharge
　of the attached sheet. (The document number refers to page 6.)
Pin namePolarity
VDD
+
-
Fail sizeSample size
Test voltage
250V500V750V1000V
03030 303
03030313
125V
03
03
※The opinion of this result similar to the HBM addition measurement result can be made.
OKI Engineering Co., Ltd
CONFIDENTIAL

09OEG32026 78
5Test period
・May13 ,2009 ～　May21 ,2009
・HBMMM test　
・FI-CDM test
・IV measu rement
：
：
：
6
Test
equipment
：
・Temperature characteristic test：
・Higjh temperature soak test：
ESDLATCH-UP TEST SYSTEM MODEL7000　
TOKYO ELECTRONICS CO.,LTD
HED-C5002 Hanwa Electronics Ind. Co.,LTD
4145 SEMICONDUCTOR PARAMETER ANALIZER　
D
16058A TEST FIXTURE D
T-2420 THEROMICS
PH-301 ESPEC
【HBM test】
7Sample NoMethods
1
2
3
Common
terminal
VDD
VSS
IO-IO
Polarity
+-
+-
+-< br>1
13
25
Sample No
500V
2
1426
1000V2000V
6
18
30
7
19
31
8
20
32
9
21
33
10
2234
4000V
11
23
35
12
24
36< br>3
15
27
4
16
28
5
17
29
【MM test】
Methods
1
2
3
Common< br>terminal
VDD
VSS
IO-IO
Polarity
+-
+-
+-
37
49
61
Sample No
5 0V
38
50
62
100V200V
42
54
66
43
55
67
44
56
68
45
5769
46
58
70
400V
47
59
7148
60
72
39
51
63
40
52
64
41
53
65
【FI-CDM test】
MethodsPo larity
1
2
+
-
125V
12
3
4 5
6
250V
12
3
45
6
Sample No< br>500V
789
101112
750V
131415
1617 18
1000V
192021
222324
※The same sample was used about +-125voltage and +-250voltage.
【HBM addition mesurement】
Test name
Pulse number test
Temperature characteristic test
High temperature soak test
Sample No
97
97
97
98
98
98
99
99
99
※The same sample was used.
8Test pin table
【HBMMM 】
PinNo
1
2
3
4
5
6
7
8
Pin name
IO
Test pin
HBMMM
●●
● ●
●●
●●
--
●●
--
●●
INHN
X T
XTN
VSS
-
Q
-
VDD
I
I
I
GND
-
O
-
5.5V
【FI- CDM】
PinNo
1
2
3
4
5
6
Pin name
IO
Test pin
FI-CDM
●
●
●
●
●
●
VDD
Q
VSS
INHN
XT
X TN
5.5V
O
GND
I
I
I
OKI Engineering Co., Ltd
CONFIDENTIAL

09OEG32026 88
【HBMMM】
9PinLayout
【FI-CDM】
〈Bottom View〉
〈TopView〉
10
Various
documents
Document contents
Initial caracteristic data
File name
【DIP8pin】Initial measurement data
【CDM】Initial measurement data
【HBM】measurement data
【MM】measurement data
【FICDM】measurement data
Report No
09 OEG32026(1)
09OEG32026(2)
09OEG32026(3)
0 9OEG32026(4)
09OEG32026(5)
HBM caracteristic data
after an electrical discharge.
MM caracteristic data
after an electrical discharge.
FI-CDM caracteristic data
after an electrical discharge.
OKI Engineering Co., Ltd
CONFIDENTIAL